t4 - lds -0 319 , rev . 1 ( 9 /25/13 ) ?201 3 microsemi corporation page 1 of 5 2n4234 C 2n4236 a vailable on commercial v ersions pnp power amplifier silicon transistor qualified per mil -prf- 19500/580 qualified levels : jan, jantx and jan txv description this family of 2n4234, 2n4235, and 2n4236 silicon transistors are military qualified up to the jantxv level for high - reliability applications. to - 205a d (formerly to - 39) package important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 2n4234 and 2n 4236 number ? jan, jantx, and jantxv qualification s available per mil - prf - 19500/580 ? rohs compliant version available applications / benefits ? short leaded to - 205a d package ? lightweight package ? military and other high - reliability applications m axim um ratings @ t a = +25 c unless otherwise noted parameters / test conditions symbol value unit junction & storage temperature t j , t stg -6 5 to + 20 0 c thermal resistance junction - to - case r ? jc 29 oc /w thermal resistance junction - to - ambient r ? ja 175 oc /w total power dissipation (1) @ t a = 25 oc (1) @ t c = 25 oc (2 ) p t 1.0 6.0 w collector C emitter v oltage 2n4234 2n4235 2n4236 v ceo - 40 - 60 - 80 v collector C base voltage 2n4234 2n4235 2n4236 v cbo - 40 - 60 - 80 v emitter - base voltage v ebo - 7.0 v base current i b - 0.5 a collector current i c - 1.0 a notes : 1. derated l inearly by 5.7 m w/c for t a > +25 c 2. derated linearly by 34 m w/c for t c > +25 c msc C lawrence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, irela nd tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com downloaded from: http:///
t4 - lds -0 319 , rev . 1 ( 9 /25/13 ) ?201 3 microsemi corporation page 2 of 5 2n4234 C 2n4236 mechanical and packaging ? case: hermetically sealed, s teel base, nic kel cap ? terminals: steel leads, n ickel plated, then solder dipped or rohs com p liant matte - tin available on commercial grade only ? marking: part number, date code, manufacturers id and serial number ? polarity: pnp ? wei ght: approximately 1.064 grams ? see p ackage d imensions on last page. part nomenclature jan 2n4234 (e3) reliability level jan = jan level jantx = jantx level jantxv = jantxv level blank = commercial rohs compliance e3 = rohs compliant ( available on commercial grade only ) blank = non - rohs compliant jede c type number symbols & definitions symbol definition i b base current: the value of the dc current in to the base terminal. i c collector current: the value of the dc current in to the collector terminal. i e emitter current: the value of the dc current into the emitter terminal. t c case temperature: the temperature measured at a specified location on the case of a device. v cb collector - base voltage: the dc voltage between the collector and the base. v cb o collector - base voltage, base open : the voltage between the collector and base terminals when the emitter terminal is open - circuited . v cc collector - supply voltage: the supply voltage applied to a circuit connected to the collector. v ce collector - emitter voltage: the dc voltage between the collector and the emitter. v ce o collector - emitter voltage , base open : the voltage between the collector and the emitte r terminals when the base terminal is open - circuited. v eb emitter - base voltage: the dc voltage between the emitter and the base v ebo emitter - base voltage, collector open : the voltage between the emitter and base terminals with the collector terminal open - circuited. downloaded from: http:///
t4 - lds -0 319 , rev . 1 ( 9 /25/13 ) ?201 3 microsemi corporation page 3 of 5 2n4234 C 2n4236 electrical characteristics @ t a = +25 c, unless otherwise noted characteristics symbol min max unit of f characteristics collector - emitter bre akdown voltage i c = - 100 ma 2n4234 2n4235 2n4236 v (br)ceo - 40 - 60 - 80 v collector - emitter cutoff current v cb = - 30 v v cb = - 40 v v cb = - 60 v 2n4234 2n4235 2n4236 i ceo - 1.0 - 1.0 - 1.0 ma collector - emitter cutoff current v cb = - 40 v , v be = - 1.5 v v cb = - 60 v , v be = - 1.5 v v cb = - 80 v , v be = - 1.5 v 2n4234 2n4235 2n4236 i cex - 100 - 100 - 100 na collector - base cutoff current v cb = - 40 v v cb = - 60 v v cb = - 80 v 2n4234 2n4235 2n4236 i cbo - 100 - 100 - 100 na emitter - base cutoff current v be = - 7.0 v i ebo - 0.5 ma on characteristic s (3) forward - current transfer ratio i c = - 100 ma , v ce = - 1.0 v i c = - 250 ma , v ce = - 1.0 v i c = - 500 ma , v ce = - 1.0 v h fe 40 30 20 150 collector - emitter saturation voltage i c = - 1.0 a , i b = - 100 ma i c = - 500 ma , i b = - 50 ma v ce(sat) - 0.6 - 0.4 v base - emitter saturation voltage i c = - 500 ma , i b = - 50 ma i c = - 1.0 a , i b = - 100 ma v be(sat) - 1.1 - 1.5 v dynami c characteristics magnitude of common emitter small - signal short - circuit forward current transfer ratio i c = - 100 ma , v ce = - 10 v , f = 1 mhz |h fe | 3.0 output capacitance v cb = - 10 v , i e = 0, f = 100 mhz c obo 100 pf downloaded from: http:///
t4 - lds -0 319 , rev . 1 ( 9 /25/13 ) ?201 3 microsemi corporation page 4 of 5 2n4234 C 2n4236 electrical characteristics @ t a = +25 c, unless otherwise noted (continued) saf e operatin g area dc tests t c = +25 c, 1 cycle, t 0.5 s test 1 v ce = - 6.0 v, i c = - 1.0 a test 2 v ce = - 12 v, i c = - 500 ma test 3 v ce = - 30 v, i c = - 166 ma ( 2n4234 ) v ce = -5 0 v, i c = -1 00 ma ( 2n4235 ) v ce = -7 0 v, i c = - 71 ma ( 2n4236 ) (3) pulse test: pulse width = 300 s, d ut y c ycl e 2.0% downloaded from: http:///
t4 - lds -0 319 , rev . 1 ( 9 /25/13 ) ?201 3 microsemi corporation page 5 of 5 2n4234 C 2n4236 package dimensions notes: 1. dimensions are in inches. 2. millimeters are given for information only. 3. beyond r (radius) maximum, tl shall be held for a minimum length of 0 .011 inch (0.28 mm). 4. dimension tl measured from maximum hd. 5. body contour optional within zone defined by hd, cd, and q. 6. cd shall not vary more than .010 inch (0.25 mm) in zone p. this zone is controlled for automatic handling. 7. leads at gauge plane 0 .054 + 0 .001 -0 .000 inch (1.37 +0.03 - 0.00 mm) below seating plane shall be within 0 .007 inch (0.18 mm) radius of true position (tp) at maximum material condition (mmc) relative to tab at m mc. 8 . dimension lu applies between l1 and l2. dimension ld applies between l2 and ll minimum. diameter is uncontrol led in l1 and beyond ll minimum. 9 . all three leads. 10 . the collector shall be internally connected to the case. 11 . dimension r (radius) applies to both inside corners of tab. 12 . in accordance with asme y14.5m, diameters are equivalent to x symbo logy. 13 . lead 1 = emitter , lead 2 = base , lead 3 = collector . ltr dimensions in ch millimeters notes min max min max cd 0 .3 05 0 .3 35 7.75 8.51 ch 0.240 0.260 6.10 6.60 hd 0.335 0.370 8.51 9.40 h 0 .009 0 .041 0.23 1.04 j 0 .028 0 .034 0.7 1 0.86 3 k 0 .029 0 .045 0.74 1.14 3 , 4 ld 0 .016 0 .021 0.41 0.53 8, 9 ll 0 .500 0 .750 12.7 19.05 lc 0 .200 tp 5.08 tp 7 lu 0 .016 0 .019 0.41 0.48 8, 9 l1 - 0 .050 - 1.27 8, 9 l2 0 .250 - 6.35 - 8, 9 p 0. 10 0 - 2.54 - 7 q - 0 .050 - 1.27 5 r - 0 .010 - 0.25 10 45 tp 45 tp 7 downloaded from: http:///
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